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This is N-channel MOSFET 10 μA 250 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK8P25DA,RQ(S. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 55 w maximum power dissipation. It features a maximum gate source voltage of +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 500 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 7.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.5v. Its forward diode voltage is 1.7v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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