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This is N-channel MOSFET 10 μA 250 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK8P25DA,RQ(S. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 55 w maximum power dissipation. It features a maximum gate source voltage of +20 v. The product carries 3.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 500 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 7.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.5v. Its forward diode voltage is 1.7v . In addition, the height is 2.3mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0.000
