Infineon BSB028N06NN3GXUMA1 N-channel MOSFET, 90 A, 60 V OptiMOS 3, 7-Pin WDSON
Product Information
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
MG-WDSON-2
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
108 nC @ 10 V
Channel Type:
N
Length:
6.35mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
78 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.53mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.8 mΩ
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This is N-channel MOSFET 90 A 60 V OptiMOS 3 7-Pin WDSON manufactured by Infineon. The manufacturer part number is BSB028N06NN3GXUMA1. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.05mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of mg-wdson-2. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 108 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.35mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 78 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.53mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 1.2v . It provides up to 2.8 mω maximum drain source resistance.
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