Vishay SI1077X-T1-GE3 P-channel MOSFET, 760 mA, 30 V, 6-Pin SOT-523
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
4.43 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
236 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.6mm
Width:
1.2mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
0.7V
Package Type:
SC-89-6
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
760 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
244 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SI1077X-T1-GE3 Internationally to many countries around the world.
This is P-channel MOSFET 760 mA 30 V 6-Pin SOT-523 manufactured by Vishay. The manufacturer part number is SI1077X-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 4.43 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 236 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.6mm. Furthermore, the product is 1.2mm wide. Its accurate length is 1.7mm. Whereas its minimum gate threshold voltage includes 0.7v. The package is a sort of sc-89-6. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 760 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 244 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.
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