Infineon IPS65R400CEAKMA1 N-channel MOSFET, 15.1 A, 700 V CoolMOS CE, 3-Pin IPAK
Product Information
Maximum Continuous Drain Current:
15.1 A
Width:
2.4mm
Maximum Drain Source Voltage:
700 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
118 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.22mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
400 mΩ
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This is N-channel MOSFET 15.1 A 700 V CoolMOS CE 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IPS65R400CEAKMA1. While 15.1 a of maximum continuous drain current. Furthermore, the product is 2.4mm wide. It has a maximum of 700 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 118 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 400 mω maximum drain source resistance.
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