Infineon IPB020N10N5ATMA1 N-channel MOSFET, 176 A, 100 V IPB020N10N5, 3 + 2 Tab-Pin TO 263
Product Information
Maximum Continuous Drain Current:
176 A
Width:
11.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.8V
Package Type:
TO 263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
168 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
IPB020N10N5
Maximum Gate Source Voltage:
20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 176 A 100 V IPB020N10N5 3 + 2 Tab-Pin TO 263 manufactured by Infineon. The manufacturer part number is IPB020N10N5ATMA1. While 176 a of maximum continuous drain current. Furthermore, the product is 11.05mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3.8v of maximum gate threshold voltage. The package is a sort of to 263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 168 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product ipb020n10n5, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.5 mω maximum drain source resistance.
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