Category:
Power MOSFET
Dimensions:
5 x 4 x 1.45mm
Maximum Continuous Drain Current:
2.3 A, 3.5 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.8V
Maximum Drain Source Resistance:
100 mΩ, 250 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
250 pF @ 20 V
Length:
5mm
Pin Count:
8
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.45mm
Minimum Operating Temperature:
-65 °C
