Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Toshiba TPN11003NL,LQ(S N-channel MOSFET, 31 A, 30 V U-MOSVIII-H, 8-Pin TSON

TPN11003NL-LQ-S Toshiba TPN11003NL,LQ(S N-channel MOSFET, 31 A, 30 V U-MOSVIII-H, 8-Pin TSON
Toshiba

Product Information

Maximum Continuous Drain Current:
31 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
TSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.5 nC @ 10 V
Channel Type:
N
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
19 W
Series:
U-MOSVIII-H
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
16 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 31 A 30 V U-MOSVIII-H 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN11003NL,LQ(S. While 31 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of tson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 19 w maximum power dissipation. The product u-mosviii-h, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 16 mω maximum drain source resistance.

pdf icon
TPN11003NL, MOSFET N-Channel 30V(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search TPN11003NL,LQ(S on website for other similar products.
We accept all major payment methods for all products including ET16798056. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TPN11003NL,LQ(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TPN11003NL,LQ(S N-channel MOSFET, 31 A, 30 V U-MOSVIII-H, 8-Pin TSON. You can also check on our website or by contacting our customer support team for further order details on Toshiba TPN11003NL,LQ(S N-channel MOSFET, 31 A, 30 V U-MOSVIII-H, 8-Pin TSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16798056 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16798056.
Yes. We ship TPN11003NL,LQ(S Internationally to many countries around the world.