Toshiba TK65G10N1 N-channel MOSFET, 136 A, 100 V, 3-Pin D2PAK
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
156 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
10.27mm
Length:
10.35mm
Maximum Drain Source Resistance:
4.5 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
136 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
4.46mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. We ship TK65G10N1 Internationally to many countries around the world.
This is N-channel MOSFET 136 A 100 V 3-Pin D2PAK manufactured by Toshiba. The manufacturer part number is TK65G10N1. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 81 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 156 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 10.27mm wide. Its accurate length is 10.35mm. It provides up to 4.5 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 136 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 4.46mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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