Toshiba TK55S10N1 N-channel MOSFET, 55 A, 100 V, 3-Pin DPAK
Product Information
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
157 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
7mm
Length:
6.5mm
Maximum Drain Source Resistance:
6.5 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
55 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
2.3mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search TK55S10N1 on website for other similar products.
We accept all major payment methods for all products including ET16797949. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TK55S10N1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK55S10N1 N-channel MOSFET, 55 A, 100 V, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK55S10N1 N-channel MOSFET, 55 A, 100 V, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16797949 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16797949.
Yes. We ship TK55S10N1 Internationally to many countries around the world.
This is N-channel MOSFET 55 A 100 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK55S10N1. The product complies with automotive standard - aec-q101. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 157 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 7mm wide. Its accurate length is 6.5mm. It provides up to 6.5 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 55 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 2.3mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.