Toshiba TK33S10N1Z N-channel MOSFET, 33 A, 100 V, 3-Pin DPAK
Product Information
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
7mm
Length:
6.5mm
Maximum Drain Source Resistance:
9.7 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
2.3mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK33S10N1Z Internationally to many countries around the world.
This is N-channel MOSFET 33 A 100 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK33S10N1Z. The product complies with automotive standard - aec-q101. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 7mm wide. Its accurate length is 6.5mm. It provides up to 9.7 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 33 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 2.3mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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