Category:
Switching Regulator
Dimensions:
15.5 x 4.5 x 20mm
Maximum Continuous Drain Current:
30.8 A
Transistor Material:
Si
Width:
4.5mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
TO-3P
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
86 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3000 pF @ 300 V
Length:
15.5mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
165 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
230 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20mm
Typical Turn-On Delay Time:
70 ns
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
88 mΩ
This is N-channel MOSFET 30.8 A 600 V DTMOSIV 3+Tab-Pin TO-3P manufactured by Toshiba. The manufacturer part number is TK31J60W,S1VE(S. It is of switching regulator category . The given dimensions of the product include 15.5 x 4.5 x 20mm. While 30.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of to-3p. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 86 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3000 pf @ 300 v . Its accurate length is 15.5mm. It contains 3+tab pins. Whereas, its typical turn-off delay time is about 165 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 230 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20mm. In addition, it has a typical 70 ns turn-on delay time . Its forward diode voltage is 1.7v . It provides up to 88 mω maximum drain source resistance.
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