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Toshiba TK31J60W,S1VE(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P

TK31J60W-S1VE-S Toshiba TK31J60W,S1VE(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P
Toshiba

Product Information

Category:
Switching Regulator
Dimensions:
15.5 x 4.5 x 20mm
Maximum Continuous Drain Current:
30.8 A
Transistor Material:
Si
Width:
4.5mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
TO-3P
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
86 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3000 pF @ 300 V
Length:
15.5mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
165 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
230 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20mm
Typical Turn-On Delay Time:
70 ns
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
88 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 30.8 A 600 V DTMOSIV 3+Tab-Pin TO-3P manufactured by Toshiba. The manufacturer part number is TK31J60W,S1VE(S. It is of switching regulator category . The given dimensions of the product include 15.5 x 4.5 x 20mm. While 30.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of to-3p. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 86 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3000 pf @ 300 v . Its accurate length is 15.5mm. It contains 3+tab pins. Whereas, its typical turn-off delay time is about 165 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 230 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20mm. In addition, it has a typical 70 ns turn-on delay time . Its forward diode voltage is 1.7v . It provides up to 88 mω maximum drain source resistance.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
TK31J60W,S1VE(S(Technical Reference)

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FAQs

Yes. You can also search TK31J60W,S1VE(S on website for other similar products.
We accept all major payment methods for all products including ET16797927. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TK31J60W,S1VE(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK31J60W,S1VE(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK31J60W,S1VE(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16797927 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16797927.
Yes. We ship TK31J60W,S1VE(S Internationally to many countries around the world.