Toshiba TK31E60X,S1X(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
30.8 A
Transistor Material:
Si
Width:
4.45mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Channel Type:
N
Length:
10.16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.1mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
88 mΩ
Checking for live stock
FAQs
Yes. You can also search TK31E60X,S1X(S on website for other similar products.
We accept all major payment methods for all products including ET16797926. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TK31E60X,S1X(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK31E60X,S1X(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3-Pin TO-220. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK31E60X,S1X(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3-Pin TO-220.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16797926 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16797926.
Yes. We ship TK31E60X,S1X(S Internationally to many countries around the world.
This is N-channel MOSFET 30.8 A 600 V DTMOSIV 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK31E60X,S1X(S. While 30.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.45mm wide. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.1mm. Its forward diode voltage is 1.7v . It provides up to 88 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.