Toshiba TK30J25D,S1F(O N-channel MOSFET, 30 A, 250 V, 3-Pin TO-3PN
Product Information
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Type:
N
Length:
15.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
260 W
Maximum Gate Source Voltage:
+20 V
Height:
20mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
60 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK30J25D,S1F(O Internationally to many countries around the world.
This is N-channel MOSFET 30 A 250 V 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is TK30J25D,S1F(O. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 100 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 260 w maximum power dissipation. It features a maximum gate source voltage of +20 v. In addition, the height is 20mm. Its forward diode voltage is 1.7v . It provides up to 60 mω maximum drain source resistance.
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