Toshiba TK25Z60X,S1F(S N-channel MOSFET, 25 A, 600 V DTMOSIV-H, 4-Pin TO-247
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
180 W
Series:
DTMOSIV-H
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.95mm
Width:
5.02mm
Length:
15.94mm
Maximum Drain Source Resistance:
125 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
25 A
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK25Z60X,S1F(S N-channel MOSFET, 25 A, 600 V DTMOSIV-H, 4-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK25Z60X,S1F(S N-channel MOSFET, 25 A, 600 V DTMOSIV-H, 4-Pin TO-247.
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Yes. We ship TK25Z60X,S1F(S Internationally to many countries around the world.
This is N-channel MOSFET 25 A 600 V DTMOSIV-H 4-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK25Z60X,S1F(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 180 w maximum power dissipation. The product dtmosiv-h, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.95mm. Furthermore, the product is 5.02mm wide. Its accurate length is 15.94mm. It provides up to 125 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 25 a of maximum continuous drain current. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins.
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