Toshiba TK16G60W N-channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
3.7V
Channel Type:
N
Width:
10.27mm
Length:
10.35mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
15.8 A
Minimum Gate Threshold Voltage:
2.7V
Forward Diode Voltage:
1.7V
Height:
4.46mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK16G60W N-channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK16G60W N-channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK.
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Yes. We ship TK16G60W Internationally to many countries around the world.
This is N-channel MOSFET 15.8 A 600 V 3-Pin D2PAK manufactured by Toshiba. The manufacturer part number is TK16G60W. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 38 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 3.7v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 10.27mm wide. Its accurate length is 10.35mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of d2pak. It consists of 1 elements per chip. While 15.8 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.7v. Its forward diode voltage is 1.7v . In addition, the height is 4.46mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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