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This is N-channel MOSFET 15.8 A 600 V DTMOSIV 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK16E60W5,S1VX(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 43 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 15.1mm. Furthermore, the product is 4.45mm wide. Its accurate length is 10.16mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of to-220. It consists of 1 elements per chip. While 15.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.7v . It provides up to 230 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
For more information please check the datasheets.
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£ 0.000
