Toshiba TK16C60W,S1VQ(S2 N-channel MOSFET, 15.8 A, 600 V DTMOSIV, 3-Pin I2PAK
Product Information
Category:
Switching Regulator
Dimensions:
10 x 4.5 x 10.4mm
Maximum Continuous Drain Current:
15.8 A
Transistor Material:
Si
Width:
4.5mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
190 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1350 pF @ 300 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
10.4mm
Typical Turn-On Delay Time:
50 ns
Forward Diode Voltage:
1.7V
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK16C60W,S1VQ(S2 Internationally to many countries around the world.
This is N-channel MOSFET 15.8 A 600 V DTMOSIV 3-Pin I2PAK manufactured by Toshiba. The manufacturer part number is TK16C60W,S1VQ(S2. It is of switching regulator category . The given dimensions of the product include 10 x 4.5 x 10.4mm. While 15.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. It provides up to 190 mω maximum drain source resistance. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 38 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1350 pf @ 300 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 100 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 10.4mm. In addition, it has a typical 50 ns turn-on delay time . Its forward diode voltage is 1.7v .
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