Toshiba TK14G65W,RQ(S N-channel MOSFET, 13.7 A, 650 V DTMOSIV, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
13.7 A
Transistor Material:
Si
Width:
8.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 10 V
Channel Type:
N
Length:
10.35mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
130 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.46mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
250 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK14G65W,RQ(S N-channel MOSFET, 13.7 A, 650 V DTMOSIV, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK14G65W,RQ(S N-channel MOSFET, 13.7 A, 650 V DTMOSIV, 3-Pin D2PAK.
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Yes. We ship TK14G65W,RQ(S Internationally to many countries around the world.
This is N-channel MOSFET 13.7 A 650 V DTMOSIV 3-Pin D2PAK manufactured by Toshiba. The manufacturer part number is TK14G65W,RQ(S. While 13.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 8.8mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 35 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.35mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 130 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.46mm. Its forward diode voltage is 1.7v . It provides up to 250 mω maximum drain source resistance.
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