Toshiba TJ9A10M3,S4Q(M P-channel MOSFET, 9 A, 100 V, 3-Pin TO-220SIS
Product Information
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
47 @ -10 V nC
Channel Type:
P
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
19 W
Maximum Gate Source Voltage:
+20 V
Height:
15mm
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
170 mΩ
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This is P-channel MOSFET 9 A 100 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TJ9A10M3,S4Q(M. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 47 @ -10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 19 w maximum power dissipation. It features a maximum gate source voltage of +20 v. In addition, the height is 15mm. Its forward diode voltage is 1.4v . It provides up to 170 mω maximum drain source resistance.
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