Toshiba TJ60S04M3L P-channel MOSFET, 60 A, 40 V, 3-Pin DPAK
Product Information
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
125 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
90 W
Maximum Gate Source Voltage:
-20 V, +10 V
Maximum Gate Threshold Voltage:
3V
Channel Type:
P
Width:
7mm
Length:
6.5mm
Maximum Drain Source Resistance:
9.4 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
60 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
2.3mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is P-channel MOSFET 60 A 40 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TJ60S04M3L. The product complies with automotive standard - aec-q101. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 125 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 90 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +10 v. The product carries 3v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 7mm wide. Its accurate length is 6.5mm. It provides up to 9.4 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 60 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 2.3mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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