Toshiba TJ15P04M3 P-channel MOSFET, 15 A, 40 V, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
29 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
P
Width:
7.18mm
Length:
6.6mm
Maximum Drain Source Resistance:
48 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
15 A
Minimum Gate Threshold Voltage:
0.8V
Forward Diode Voltage:
1.2V
Height:
2.3mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is P-channel MOSFET 15 A 40 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TJ15P04M3. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 26 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 29 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 7.18mm wide. Its accurate length is 6.6mm. It provides up to 48 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 15 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.8v. Its forward diode voltage is 1.2v . In addition, the height is 2.3mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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