Toshiba T2N7002BK Dual N-channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.39 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.1V
Height:
0.9mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
1.75 Ω
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
400 mA
Minimum Gate Threshold Voltage:
1.1V
Forward Diode Voltage:
1.1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship T2N7002BK Internationally to many countries around the world.
This is Dual N-channel MOSFET 400 mA 60 V 3-Pin SOT-23 manufactured by Toshiba. The manufacturer part number is T2N7002BK. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.39 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.1v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. It provides up to 1.75 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 2 elements per chip. While 400 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.1v. Its forward diode voltage is 1.1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
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