Toshiba SSM3K329R N-channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23F
Product Information
Dimensions:
2.9 x 1.8 x 0.7mm
Maximum Continuous Drain Current:
3.5 A
Width:
1.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-23F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.5 nC @ 4 V
Channel Type:
N
Typical Input Capacitance @ Vds:
123 pF @ 15 V
Length:
2.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
6.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±12 V
Height:
0.7mm
Typical Turn-On Delay Time:
9.2 ns
Maximum Drain Source Resistance:
289 mΩ
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Yes. We ship SSM3K329R Internationally to many countries around the world.
This is N-channel MOSFET 3.5 A 30 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3K329R. The given dimensions of the product include 2.9 x 1.8 x 0.7mm. While 3.5 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-23f. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.5 nc @ 4 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 123 pf @ 15 v . Its accurate length is 2.9mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 6.4 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.7mm. In addition, it has a typical 9.2 ns turn-on delay time . It provides up to 289 mω maximum drain source resistance.
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