Toshiba SSM3J334R,LF(T P-channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
5.9 nC @ -10 V nC
Maximum Continuous Drain Current:
4 A
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
+20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
P
Width:
1.8mm
Length:
2.9mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-23
Number of Elements per Chip:
1
Transistor Material:
Si
Maximum Drain Source Resistance:
136 mΩ
Height:
0.8mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is P-channel MOSFET 4 A 30 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3J334R,LF(T. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 5.9 nc @ -10 v nc. While 4 a of maximum continuous drain current. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of +20 v. The product carries 2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 1.8mm wide. Its accurate length is 2.9mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-23. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It provides up to 136 mω maximum drain source resistance. In addition, the height is 0.8mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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