Toshiba 2SK3564(STA4,Q,M) N-channel MOSFET, 3 A, 900 V, 3-Pin TO-220SIS

Enrgtech Part No: ET16797686
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Manufacturer Part No:
2SK3564(STA4,Q,M)
|
Manufacturer: Toshiba

2SK3564-STA4-Q-M- Toshiba 2SK3564(STA4,Q,M) N-channel MOSFET, 3 A, 900 V, 3-Pin TO-220SIS

Product Information

Maximum Continuous Drain Current:

3 A

Transistor Material:

Width:

4.5mm

Transistor Configuration:

Single

Maximum Drain Source Voltage:

900 V

Maximum Gate Threshold Voltage:

Package Type:

TO-220SIS

Number of Elements per Chip:

Minimum Gate Threshold Voltage:

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

17 nC @ 10 V

Channel Type:

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This is N-channel MOSFET 3 A 900 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is 2SK3564(STA4,Q,M). While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 40 w @ 25 °c maximum power dissipation. It features a maximum gate source voltage of +30 v. In addition, the height is 15mm. Its forward diode voltage is -1.9v . It provides up to 4.3 ω maximum drain source resistance.

2SK3564 900V 3A N-channel MOSFET Datasheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Toshiba 2SK3564(STA4,Q,M) N-channel MOSFET, 3 A, 900 V, 3-Pin TO-220SIS

2SK3564(STA4,Q,M)

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