Infineon SPP04N80C3XKSA1 N-channel MOSFET, 4 A, 800 V CoolMOS C3, 3-Pin TO-220AB
Product Information
Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
63 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.95mm
Width:
4.57mm
Length:
10.36mm
Maximum Drain Source Resistance:
1.3 Ω
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 4 A 800 V CoolMOS C3 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is SPP04N80C3XKSA1. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 63 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.95mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.36mm. It provides up to 1.3 ω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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