Infineon SPD30P06PGBTMA1 P-channel MOSFET, 30 A, 60 V SIPMOS, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
75 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Forward Diode Voltage:
1.7V
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SPD30P06PGBTMA1 Internationally to many countries around the world.
This is P-channel MOSFET 30 A 60 V SIPMOS 3-Pin DPAK manufactured by Infineon. The manufacturer part number is SPD30P06PGBTMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 75 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.7v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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