Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Infineon SPD04N50C3ATMA1 N-channel MOSFET, 4.5 A, 560 V CoolMOS C3, 3-Pin DPAK

SPD04N50C3ATMA1 Infineon  N-channel MOSFET, 4.5 A, 560 V CoolMOS C3, 3-Pin DPAK
SPD04N50C3ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
950 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 4.5 A 560 V CoolMOS C3 3-Pin DPAK manufactured by Infineon. The manufacturer part number is SPD04N50C3ATMA1. While 4.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 560 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 950 mω maximum drain source resistance.

pdf icon
SPD04N50C3, CoolMOS Power Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search SPD04N50C3ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16793863. Please check your shopping cart at the time of order.
You can order Infineon brand products with SPD04N50C3ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon SPD04N50C3ATMA1 N-channel MOSFET, 4.5 A, 560 V CoolMOS C3, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon SPD04N50C3ATMA1 N-channel MOSFET, 4.5 A, 560 V CoolMOS C3, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793863 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793863.
Yes. We ship SPD04N50C3ATMA1 Internationally to many countries around the world.