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This is P-channel MOSFET 80 A 60 V SIPMOS 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is SPB80P06PGATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 115 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 340 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. It provides up to 23 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 80 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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£ 0.000
