Infineon SPB80P06PGATMA1 P-channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
115 nC @ 10 V
Channel Type:
P
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
340 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
23 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SPB80P06PGATMA1 Internationally to many countries around the world.
This is P-channel MOSFET 80 A 60 V SIPMOS 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is SPB80P06PGATMA1. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 115 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 340 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 23 mω maximum drain source resistance.
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