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This is N-channel MOSFET 190 A 100 V HEXFET 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRLS4030-7PPBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 93 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 370 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 1v. The product carries 2.5v of maximum gate threshold voltage. It provides up to 4 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 190 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.55mm. It has a maximum operating temperature of +175 °c. It contains 7 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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£ 0.000
