Infineon IRLS3036TRLPBF N-channel MOSFET, 270 A, 60 V HEXFET, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
270 A
Width:
4.83mm
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
91 nC @ 4.5 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
9.65mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
2.8 mΩ
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Yes. We ship IRLS3036TRLPBF Internationally to many countries around the world.
This is N-channel MOSFET 270 A 60 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRLS3036TRLPBF. While 270 a of maximum continuous drain current. Furthermore, the product is 4.83mm wide. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 91 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 380 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 9.65mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 2.8 mω maximum drain source resistance.
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