Infineon IRLIZ34NPBF N-channel MOSFET, 22 A, 55 V HEXFET, 3-Pin TO-220FP
Product Information
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 5 V
Channel Type:
N
Length:
10.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
37 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
8.9mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
60 mΩ
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This is N-channel MOSFET 22 A 55 V HEXFET 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IRLIZ34NPBF. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.8mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 25 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 37 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 8.9mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 60 mω maximum drain source resistance.
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