This is N-channel MOSFET 171 A 30 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRLB8314PBF. While 171 a of maximum continuous drain current. Furthermore, the product is 4.83mm wide. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 40 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 3.2 mω maximum drain source resistance.
ESD Control Selection Guide V1(Technical Reference)
IRLB8314PbF, HEXFET Power MOSFET 30V(Technical Reference)
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This is N-channel MOSFET 171 A 30 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRLB8314PBF. While 171 a of maximum continuous drain current. Furthermore, the product is 4.83mm wide. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 40 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 3.2 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.