Category:
Power MOSFET
Dimensions:
10.54 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
295 A
Width:
4.83mm
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.9V
Maximum Drain Source Resistance:
1.4 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
150 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7437 pF @ 25 V
Length:
10.54mm
Pin Count:
7+Tab
Forward Transconductance:
122S
Typical Turn-Off Delay Time:
78 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
231 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.65mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
