Infineon IRFS4020TRLPBF N-channel MOSFET, 18 A, 200 V HEXFET, 3-Pin D2PAK

Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
100 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4.9V
Height:
9.65mm
Width:
4.83mm
Length:
10.67mm
Maximum Drain Source Resistance:
105 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.3V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
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This is N-channel MOSFET 18 A 200 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS4020TRLPBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 100 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4.9v of maximum gate threshold voltage. In addition, the height is 9.65mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. It provides up to 105 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.3v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins.

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