This is N-channel MOSFET 87 A 75 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR7740TRPBF. While 87 a of maximum continuous drain current. Furthermore, the product is 6.22mm wide. It has a maximum of 75 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 84 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 7.2 mω maximum drain source resistance.
IRFR7740PbF, IRFU7740PbF, StrongIRFET HEXFET Power MOSFET 75V(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 87 A 75 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR7740TRPBF. While 87 a of maximum continuous drain current. Furthermore, the product is 6.22mm wide. It has a maximum of 75 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 84 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 7.2 mω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.