Infineon IRFH5210TRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN
Product Information
Maximum Continuous Drain Current:
10 A
Width:
6mm
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN 5 x 6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
14.9 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFH5210TRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFH5210TRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN.
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Yes. We ship IRFH5210TRPBF Internationally to many countries around the world.
This is N-channel MOSFET 10 A 100 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH5210TRPBF. While 10 a of maximum continuous drain current. Furthermore, the product is 6mm wide. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn 5 x 6. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.9mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 14.9 mω maximum drain source resistance.
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