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This is N-channel MOSFET 10 A 100 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH5210TRPBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 6mm wide. Its accurate length is 5mm. It provides up to 14.9 mω maximum drain source resistance. The package is a sort of pqfn 5 x 6. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 10 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.3v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
For more information please check the datasheets.
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