Infineon IRF7907TRPBF Dual N-channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC

Infineon

Product Information

Forward Voltage Vf:
1V
Width:
4 mm
Maximum Drain Source Resistance Rds:
20.5mΩ
Automotive Standard:
No
Transistor Configuration:
Dual
Typical Gate Charge Qg @ Vgs:
14nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
9.1A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type N
Length:
5mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
HEXFET
Height:
1.5mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Dual N-channel MOSFET 9.1 A 11 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7907TRPBF. Furthermore, the product is 4 mm wide. The product complies with automotive standard - no. The product offers dual transistor configuration. The package is a sort of soic. It consists of 2 elements per chip. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55°c.

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IRF7907PbF, Dual HEXFET Power MOSFET 30V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7907TRPBF Dual N-channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7907TRPBF Dual N-channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC.