Maximum Continuous Drain Current:
1.7 A, 2.4 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.7V
Package Type:
MSOP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V
Channel Type:
N, P
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.86mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ, 270 mΩ
This is Dual N/P-channel MOSFET 1.7 A 2.4 A 20 V HEXFET 8-Pin MSOP manufactured by Infineon. The manufacturer part number is IRF7507TRPBF. While 1.7 a, 2.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.7v of maximum gate threshold voltage. The package is a sort of msop. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.3 nc @ 4.5 v, 5.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.25 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.86mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 140 mω, 270 mω maximum drain source resistance.
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