Infineon IRF7342PBF Dual P-channel MOSFET, 3.4 A, 55 V HEXFET, 8-Pin SOIC

Enrgtech Part No: ET16793540
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Manufacturer Part No:
IRF7342PBF
|
Manufacturer: Infineon

IRF7342PBF Infineon Dual P-channel MOSFET, 3.4 A, 55 V HEXFET, 8-Pin SOIC

Product Information

Maximum Continuous Drain Current:

3.4 A

Transistor Material:

Width:

4mm

Transistor Configuration:

Isolated

Maximum Drain Source Voltage:

55 V

Maximum Gate Threshold Voltage:

Package Type:

SOIC

Number of Elements per Chip:

Minimum Gate Threshold Voltage:

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

26 nC @ 10 V

Channel Type:

Checking for live stock

Discover the Infineon IRF7342PBF Dual P‑Channel MOSFET, a reliable, surface‑mount component delivering robust performance for UK electronics professionals. Featuring a maximum drain-to-source voltage of 55 V and continuous drain current of 3.4 A, this compact SO‑8 HEXFET is engineered from trusted silicon (Si) material for long-term reliability. With ultra-low on-resistance of just 105 mΩ and efficient gate control via a typical gate charge of 26 nC at 10 V, the IRF7342PBF excels in power-sensitive applications.

Why Choose this Infineon Dual P‑Channel MOSFET?

The IRF7342PBF stands out for its efficiency and compact form. Its ultra-low on-resistance lowers conduction losses, while the dual-channel SO-8 design reduces PCB real estate, an advantage in tight UK equipment layouts. It ensures stable performance in both demanding industrial systems and consumer devices. In short, it delivers quality, efficiency, and scalability where real-world reliability matters.

Advanced Features and Benefits

Ultra‑Low R_DS(on): (max 105 mΩ) for efficient, low‑loss performance
Compact SO‑8 Dual‑Channel Design: saves valuable PCB space
High Drain Current (3.4 A): supports robust power requirements
Wide Temperature Range (–55 °C to +150 °C): ensures resilience in UK indoor and outdoor applications.
Efficient Gate Switching: (typical gate charge 26 nC @ 10 V) aids fast control response.

Product Use Cases

Industrial and home automation control circuits
Load switching in renewable energy systems (e.g. solar or wind inverters)
Power management in telecommunications and networking equipment
Consumer electronics needing compact, efficient power switching
Railway or transportation electronics exposed to thermal stress

Datasheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. We ship IRF7342PBF Internationally to many countries around the world.

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We accept all major payment methods for all products including ET16793540. Please check your shopping cart at the time of order.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793540 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793540.

You can order Infineon brand products with IRF7342PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Infineon IRF7342PBF Dual P-channel MOSFET, 3.4 A, 55 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7342PBF Dual P-channel MOSFET, 3.4 A, 55 V HEXFET, 8-Pin SOIC.