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This is N-channel MOSFET 129 A 135 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF135S203. It has a maximum of 135 v drain source voltage. With a typical gate charge at Vgs includes 180 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 441 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 9.65mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. It provides up to 8.4 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 129 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.3v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins.
For more information please check the datasheets.
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