Infineon IPW65R190CFDFKSA1 N-channel MOSFET, 17.5 A, 650 V CoolMOS CFD, 3-Pin TO-247
Product Information
Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
68 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
151 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Width:
5.21mm
Length:
16.13mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
17.5 A
Transistor Material:
Si
Forward Diode Voltage:
0.9V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 17.5 A 650 V CoolMOS CFD 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R190CFDFKSA1. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 68 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 151 w maximum power dissipation. The product coolmos cfd, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 17.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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