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Infineon IPW60R299CPFKSA1 N-channel MOSFET, 11 A, 650 V CoolMOS CP, 3-Pin TO-247

IPW60R299CPFKSA1 Infineon  N-channel MOSFET, 11 A, 650 V CoolMOS CP, 3-Pin TO-247
IPW60R299CPFKSA1
IPW60R299CPFKSA1
ET16793443
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
16.03 x 5.16 x 21.1mm
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
5.16mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
299 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1100 pF @ 100 V
Length:
16.03mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
96 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 11 A 650 V CoolMOS CP 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW60R299CPFKSA1. It is of power mosfet category . The given dimensions of the product include 16.03 x 5.16 x 21.1mm. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.16mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. It provides up to 299 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1100 pf @ 100 v . Its accurate length is 16.03mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 96 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v .

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IPW60R299CP, CoolMOS Power Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You can order Infineon brand products with IPW60R299CPFKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPW60R299CPFKSA1 N-channel MOSFET, 11 A, 650 V CoolMOS CP, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Infineon IPW60R299CPFKSA1 N-channel MOSFET, 11 A, 650 V CoolMOS CP, 3-Pin TO-247.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793443 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793443.
Yes. We ship IPW60R299CPFKSA1 Internationally to many countries around the world.