Infineon IPW50R190CEFKSA1 N-channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247
Product Information
Maximum Continuous Drain Current:
18.5 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
47.2 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
127 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.85V
Maximum Drain Source Resistance:
190 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 18.5 A 550 V CoolMOS CE 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW50R190CEFKSA1. While 18.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 47.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 127 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.85v . It provides up to 190 mω maximum drain source resistance.
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