Infineon IPT007N06NATMA1 N-channel MOSFET, 300 A, 60 V OptiMOS 5, 8-Pin HSOF
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
216 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
OptiMOS 5
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.4mm
Width:
10.1mm
Length:
10.58mm
Maximum Drain Source Resistance:
1 mΩ
Package Type:
HSOF-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
300 A
Transistor Material:
Si
Forward Diode Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPT007N06NATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 300 A 60 V OptiMOS 5 8-Pin HSOF manufactured by Infineon. The manufacturer part number is IPT007N06NATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 216 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 375 w maximum power dissipation. The product optimos 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.4mm. Furthermore, the product is 10.1mm wide. Its accurate length is 10.58mm. It provides up to 1 mω maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 300 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration.
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