Infineon IPT004N03LATMA1 N-channel MOSFET, 300 A, 30 V OptiMOS, 8+Tab-Pin HSOF

Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
252 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS™
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
2.4mm
Width:
10.58mm
Length:
10.1mm
Maximum Drain Source Resistance:
500 μΩ
Package Type:
HSOF-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
300 A
Minimum Gate Threshold Voltage:
0.7V
Forward Diode Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
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This is N-channel MOSFET 300 A 30 V OptiMOS 8+Tab-Pin HSOF manufactured by Infineon. The manufacturer part number is IPT004N03LATMA1. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 252 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos™, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.2v of maximum gate threshold voltage. In addition, the height is 2.4mm. Furthermore, the product is 10.58mm wide. Its accurate length is 10.1mm. It provides up to 500 μω maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 300 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.7v. Its forward diode voltage is 1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.

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IPT004N03L, OptiMOS Power-MOSFET 30V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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