Infineon IPP60R199CPXKSA1 N-channel MOSFET, 16 A, 650 V CoolMOS CP, 3-Pin TO-220
Product Information
Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
139 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
15.95mm
Width:
4.57mm
Length:
10.36mm
Maximum Drain Source Resistance:
490 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
16 A
Minimum Gate Threshold Voltage:
2.5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 16 A 650 V CoolMOS CP 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP60R199CPXKSA1. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 139 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 15.95mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.36mm. It provides up to 490 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 16 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.5v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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