Infineon IPP200N25N3GXKSA1 N-channel MOSFET, 64 A, 250 V OptiMOS 3, 3-Pin TO-220

Infineon

Product Information

Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
64 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.57mm
Width:
15.95mm
Length:
10.36mm
Maximum Drain Source Resistance:
20 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
64 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 64 A 250 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP200N25N3GXKSA1. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.57mm. Furthermore, the product is 15.95mm wide. Its accurate length is 10.36mm. It provides up to 20 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 64 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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IPB200N25N3 G, IPP200N25N3 G, IPI200N25N3 G, OptiMOS3 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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