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Infineon IPP126N10N3GXKSA1 N-channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin TO-220

IPP126N10N3GXKSA1 Infineon  N-channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin TO-220
Infineon

Product Information

Maximum Continuous Drain Current:
58 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
94 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
23.5 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 58 A 100 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP126N10N3GXKSA1. While 58 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 26 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 94 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 23.5 mω maximum drain source resistance.

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IPP126N10N3 G, IPB123N10N3 G, IPI126N10N3 G, OptiMOS3 Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPP126N10N3GXKSA1 N-channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin TO-220. You can also check on our website or by contacting our customer support team for further order details on Infineon IPP126N10N3GXKSA1 N-channel MOSFET, 58 A, 100 V OptiMOS 3, 3-Pin TO-220.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793363 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793363.
Yes. We ship IPP126N10N3GXKSA1 Internationally to many countries around the world.