Infineon IPP120P04P4L03AKSA1 P-channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Channel Type:
P
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
136 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
15.65mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.2 mΩ
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This is P-channel MOSFET 120 A 40 V OptiMOS P 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP120P04P4L03AKSA1. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.4mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 180 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 136 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 15.65mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5.2 mω maximum drain source resistance.
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